1 motorola small?signal transistors, fets and diodes device data preliminary information low r ds(on) small-signal mosfets tmos single p-channel field effect transistors part of the greenline ? portfolio of devices with energy? conserving traits. these miniature surface mount mosfets utilize motorola's high cell density, hdtmos process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. typical applications are dc?dc converters, power management in portable and battery?powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. ? low r ds(on) provides higher efficiency and extends battery life ? miniature tsop 6 surface mount package saves board space ? visit our web site at http://www.mot?sps.com/ospd maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss 20 vdc gate?to?source voltage e continuous v gs 8.0 vdc drain current e continuous @ t a = 25 c drain current e pulsed drain current (t p 10 m s) i d i dm 3.3 20 a total power dissipation @ t a = 25 c mounted on fr4 t 5 sec p d 2.0 w operating and storage temperature range t j , t stg ? 55 to 150 c thermal resistance e junction?to?ambient r q ja 128 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c ordering information device reel size tape width quantity MGSF3441VT1 7 8 mm embossed tape 3000 mgsf3441vt3 13 8 mm embossed tape 10,000 greenline is a trademark of motorola, inc. hdtmos is a trademark of motorola, inc. tmos is a registered trademark of motorola, inc. thermal clad is a trademark of the bergquist company. this document contains information on a product under development. motorola reserves the right to change or discontinue this pr oduct without notice. preferred devices are motorola recommended choices for future use and best overall value. order this document by MGSF3441VT1/d motorola semiconductor technical data case 318g?02, style 1 tsop 6 plastic MGSF3441VT1 p?channel enhancement?mode tmos mosfet r ds(on) = 78 m w (typ) motorola preferred device d d d g d s ? motorola, inc. 1997 ? ? drain 3 gate source 4 6 5 2 1
MGSF3441VT1 2 motorola small?signal transistors, fets and diodes device data electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (v gs = 0 vdc, i d = 10 m a) v (br)dss 20 e e vdc zero gate voltage drain current (v ds = 20 vdc, v gs = 0 vdc) (v ds = 20 vdc, v gs = 0 vdc, t j = 70 c) i dss e e e e 1.0 4.0 m adc gate?body leakage current (v gs = 8.0 vdc, v ds = 0) i gss e e 100 nadc on characteristics (1) gate threshold voltage (v ds = v gs , i d = 250 m adc) v gs(th) 0.45 e e vdc static drain?to?source on?resistance (v gs = 4.5 vdc, i d = 3.3 a) (v gs = 2.5 vdc, i d = 2.9 a) r ds(on) e e 0.078 0.110 0.090 0.135 ohms dynamic characteristics input capacitance (v ds = 5.0 v) c iss e 90 e pf output capacitance (v ds = 5.0 v) c oss e 50 e transfer capacitance (v dg = 5.0 v) c rss e 10 e switching characteristics (2) turn?on delay time t d(on) e 27 50 ns rise time (v dd = 15 vdc, i d = 1.0 a, t r e 17 30 turn?off delay time (v dd 15 vdc , i d 1 . 0 a , v gen = 10 v, r l = 10 w ) t d(off) e 52 80 fall time t f e 45 70 gate charge q t e 3000 e pc source?drain diode characteristics continuous current i s e e 1.0 a pulsed current i sm e e 20 a forward voltage (2) v sd e 0.80 1.2 v (1) pulse test: pulse width 300 m s, duty cycle 2%. (2) switching characteristics are independent of operating junction temperature.
MGSF3441VT1 3 motorola small?signal transistors, fets and diodes device data typical electrical characteristics figure 1. output characteristics figure 2. transfer characteristics figure 3. on?resistance versus drain current figure 4. capacitance figure 5. gate charge figure 6. on?resistance versus junction temperature 3.0 0 v ds , drain-to-source voltage (v) 20 16 8.0 12 v gs , gate-to-source voltage (v) 0 8.0 4.0 0 0 i d , drain current (a) 0.30 0.24 0.18 0.12 0.06 0 v ds , drain-to-source voltage (v) 4.0 0 1400 1200 1000 800 600 0 8.0 20 4.0 0 q g , total gate charge (nc) 5.0 3.0 2.0 1.0 0 t j , junction temperature ( c) -25 100 -50 1.8 1.6 1.2 1.0 0.8 0.6 50 2.0 i d , drain current (a) i r c, capacitance (pf) 4.0 0 1.0 2.0 4.0 5.0 1.0 2.0 3.0 4.0 12 16 20 4.0 8.0 12 16 12 16 20 , gate-to-source voltage (v) v gs 6.0 10 8.0 4.0 0 25 125 150 75 , drain current (a) d , on-resistance ( ) ds(on) 400 200 r , on-resistance ( ) (normalized) ds(on) 1.4 v gs = 4.5 v 4.0 v 3.5 v 3.0 v 2.5 v 1.5 v 2.0 v v gs = 2.5 v v gs = 4.5 v v ds = 10 v i d = 3.3 a v gs = 4.5 v i d = 3.3 a c iss c oss c rss t c = -55 c 125 c 25 c
MGSF3441VT1 4 motorola small?signal transistors, fets and diodes device data typical electrical characteristics figure 7. source?drain diode forward voltage figure 8. on?resistance versus gate?to?source voltage figure 9. threshold voltage figure 10. single pulse power figure 11. normalized thermal transient impedance, junction?to?ambient 0.75 0 v sd , source-to-drain voltage (v) 20 10 v gs , gate-to-source voltage (v) 0 0.12 0.06 0 -50 t j , temperature ( c) 0.4 0.3 0.2 0.1 0 -0.1 time (sec) 0.1 0.01 20 16 12 8.0 0 150 i s , source current (a) v power (w) 1.0 0.25 0.50 1.00 1.25 2.0 4.0 6.0 8.0 0.18 0.24 0.30 -25 0 25 50 1.0 10 , variance (v) gs(th) 4.0 1.50 t j = 150 c t j = 25 c r , on-resistance ( ) ds(on) i d = 3.3 a -0.2 75 100 125 i d = 250 a square wave pulse duration (sec) 0.0001 0.01 0.1 1.0 10 30 0.1 0.01 2.0 1.0 normalized effective transient thermal impedance 0.001 1. duty cycle, d = t 1 /t 2 2. per unit base = 2. r thja = 62.5 c/w 3. t jm - t a = p dm z thja (t) 4. surface mounted p dm t 1 t 2 notes: single pulse duty cycle = 0.5 0.02 0.05 0.1 0.2
MGSF3441VT1 5 motorola small?signal transistors, fets and diodes device data information for using the tsop?6 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. mm inches 1.9 0.039 1.0 0.094 0.7 0.074 2.4 0.028 0.95 0.037 0.95 0.037 tsop?6 tsop?6 power dissipation the power dissipation of the tsop?6 is a function of the drain pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the tsop?6 package, p d can be calculated as follows: p d = t j(max) ? t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 2.0 watts. p d = 150 c ? 25 c 128 c/w = 2.0 watts the 128 c/w for the tsop?6 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 2.0 watts. there are other alternatives to achieving higher power dissipation from the tsop?6 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
MGSF3441VT1 6 motorola small?signal transistors, fets and diodes device data package dimensions case 318g?02 issue a tsop 6 plastic style 1: pin 1. drain 2. drain 3. gate 4. source 5. drain 6. drain 23 4 5 6 a l 1 s g d b h c 0.05 (0.002) dim min max min max inches millimeters a 0.1142 0.1220 2.90 3.10 b 0.0512 0.0669 1.30 1.70 c 0.0354 0.0433 0.90 1.10 d 0.0098 0.0197 0.25 0.50 g 0.0335 0.0413 0.85 1.05 h 0.0005 0.0040 0.013 0.100 j 0.0040 0.0102 0.10 0.26 k 0.0079 0.0236 0.20 0.60 l 0.0493 0.0610 1.25 1.55 m 0 10 0 10 s 0.0985 0.1181 2.50 3.00 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. m j k motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including at ypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motoro la, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.; tatsumi?spd?jldc, 6f seibu?butsuryu?center, p.o. box 5405, denver, colorado 80217. 303?675?2140 or 1?800?441?2447 3?14?2 tatsumi koto?ku, tokyo 135, japan. 81?3?3521?8315 mfax ? : rmfax0@email.sps.mot.com ? t ouchtone 602?244?6609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, ? us & canada only 1?800?774?1848 51 ting kok road, tai po, n.t., hong kong. 852?26629298 internet : http://www.mot.com/sps/ this device has a class 1 esd rating. MGSF3441VT1/d ?
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